C2767 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

C2767

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2767

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=100µA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100µA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

Switching times

IC=2A; IB=0.8A

VCB=250V ;IE=0

VEB=7V; IC=0

IC=1A ; VCE=5V

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=4A; IB1=-IB2=-0.4A

RL=20@

MIN TYP. MAX UNIT

200

V

250

V

7

V

0.2

V

1.0

V

10

µA

100 µA

20

80

1.0

µs

2.0

µs

1.0

µs

2

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