2N6253 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N6253 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6253
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
45
V
VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3A
1.0
V
VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=5A
4.0
V
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
1.7
V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=25V; IB=0
VCE=55V; VBE=-1.5V
VCE=50V; VBE=-1.5V TC=150℃
VEB=5V; IC=0
1.5
mA
2.0
10.0
mA
10
mA
hFE-1
DC current gain
IC=3A ; VCE=4V
20
70
hFE-2
DC current gain
IC=15A ; VCE=4V
3
2
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