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IRFN044SMD View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name
Description
Manufacturer
IRFN044SMD
Semelab
Semelab - > TT Electronics plc  Semelab
IRFN044SMD Datasheet PDF : 2 Pages
1 2
SEME
LAB
IRFN044SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 21A
ID = 34A
ID = 250mA
IDS = 21A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 34A
VDS = 0.5BVDSS
ID = 34A
VDS = 0.5BVDSS
VDD = 30V
ID = 34A
RG = 9.1W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
IS = 34A
TJ = 25°C
VGS = 0
IF = 34A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min. Typ. Max. Unit
60
V
0.68
V/°C
0.040 W
0.050
2
4
V
17
S((WW)
25
mA
250
100
nA
–100
2400
1100
pF
230
39
88
nC
6.7
15
nC
18
52
23
130
ns
81
79
34
A
136
2.5
V
220 ns
1.6 mC
Negligible
0.8
nH
2.8
Prelim. 7/00

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