IRFN9240
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
4.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
Gate-to-Source Leakage Forward
—
IGSS
Gate-to-Source Leakage Reverse
—
Qg
Total Gate Charge
—
Qgs
Gate-to-Source Charge
—
Qgd
Gate-to-Drain (‘Miller’) Charge
—
td(on)
Turn-On Delay Time
—
tr
Rise Time
—
td(off)
Turn-Off Delay Time
—
tf
Fall Time
—
LS + LD
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Typ Max Units
—— V
-0.2 — V/°C
— 0.51
— 0.52 Ω
— -4.0 V
— — S( )
— -25
— -250 µA
— -100 nA
— 100
— 60
— 15 nC
— 38
— 35
— 85
ns
— 85
— 65
4.0 — nH
1200
570 — pF
81 —
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -7.0A➃
VGS = -10V, ID = -11A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -7.0A➃
VDS= -160V, VGS= 0V
VDS = -160V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS =20V
VGS = -10V, ID= -11A
VDS = -100V
VDD = -100V, ID = -11A,
RG =9.1Ω, VGS = -10V
Measured from the center of
drain pad to center of source
pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode) — — -11
A
ISM Pulse Source Current (Body Diode) ➀
— — -44
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — -4.6 V
— — 440 nS
— — 7.2 µc
Tj = 25°C, IS = -11A, VGS = 0V ➃
Tj = 25°C, IF = -11A, di/dt ≤-100A/µs
VDD ≤ -30V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max Units
— — 1.0
°C/W
— 4.0 —
Test Conditions
Soldered to a copper-clad PC board
For footnotes refer to the last page
2
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