BLW80 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BLW80 Datasheet PDF : 4 Pages
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CHARACTERISTICS
Tj = 25 "C
Breakdown voltages
Collector-emitter voltage
VBE = O; lc = 10mA
Collector-emitter voltage
open base; IQ = 50 mA
Emitter-base voltage
open collector; IE= 4 mA
Collector cut-off current
VBE = 0; V C E = 1 7 V
D.C. current gain (1)
lc = 0,5A;VCE,5V
V(BR)CES
VJBRJCEO
VJBRJEBO
ICES
hFE
>
>
>
<
>
typ
Collector-emitter saturation voltage tr>
l c = 1,5 A; IB = 0,3 A
Transition frequency at f = 500 MHz 0)
IC=0,5A;VCE= 12,5V
\c= 1,5 A; VCE = 12,5V
Collector capacitance atf = 1 MHz
IE = le = 0;VCB= 12,5V
Feedback capacitance at f = 1 MHz
lc = 40mA;VCE= 12,5V
Collector-stud capacitance
VCEsat
typ
fT
typ
fT
typ
Cc
typ
Cre
typ
Ccs
typ
Note
1. Measured under pulse conditions: tp < 200 |as; 8 < 0,02.
36 V
17V
4V
4 mA
10
^
0,75V
1,75 GHz
1,25 GHz
14 pF
7,1 pF
1,2 pF
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