MTP1302 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MTP1302 Datasheet PDF : 8 Pages
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MTP1302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
V(BR)DSS
30
IDSS
−
−
IGSS
−
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 10 Vdc, ID = 42 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
(VGS = 10 Vdc, ID = 42 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
VGS(th)
1.0
RDS(on)
−
−
−
VDS(on)
−
−
−
gFS
10
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
QT
−
(VDS = 24 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc)
Q1
−
Q2
−
Q3
−
Gate Charge
QT
−
(VDS = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
Typ
Max
Unit
Vdc
−
−
µAdc
−
10
−
100
nAdc
−
100
Vdc
1.5
2.0
mW
19
22
26
29
19.5
−
Vdc
0.38
0.5
−
0.33
0.82
−
Mhos
16
−
755
1162
pF
370
518
102
204
7.2
15
ns
52
104
45
90
73
146
14.5
21.8
nC
2.2
−
8.8
−
6.8
−
27
40.5
nC
2.2
−
10
−
7.2
−
Vdc
0.83
1.1
0.79
−
38
−
ns
19
−
20
−
36
−
µC
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