HYB5117805BJ-50 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYB5117805BJ-50

2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)

Infineon Technologies 

2M x 8 - Bit Dynamic RAM

2k Refresh

(Hyper Page Mode- EDO)

HYB5117805BSJ -50/-60/-70

Advanced Information

• 2 097 152 words by 8-bit organization

• 0 to 70 °C operating temperature

• Performance:

tRAC

tCAC

tAA

tRC

tHPC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Hyper page mode (EDO)

cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

84 104 124 ns

20 25 30 ns

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 660 mW active (-50 version)

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

11 mW standby (TTL)

5.5. mW standby (MOS)

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,

self refresh and test mode

• Hyper page mode (EDO) capability

• All inputs, outputs and clocks fully TTL-compatible

• 2048 refresh cycles / 32 ms (2k-Refresh)

• Plastic Package:

P-SOJ-28-3 400 mil

Semiconductor Group

1

1.96

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