MPSW56 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MPSW56 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW55/D
One Watt Amplifier Transistors
PNP Silicon
COLLECTOR
3
MPSW55
MPSW56*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPSW55 MPSW56 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–60
–80
–60
–80
–4.0
–500
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW55
MPSW56
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –40 Vdc, IB = 0)
(VCE = –60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW55
MPSW56
MPSW55
MPSW56
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min
Max
Unit
Vdc
–60
—
–80
—
–4.0
—
Vdc
µAdc
—
–0.5
—
–0.5
µAdc
—
–0.1
—
–0.1
—
–0.1
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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