MPSW55 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MPSW55 Datasheet PDF : 4 Pages
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MPSW55, MPSW56
-1.0
TJ = 25°C
-0.8
-0.6
IC = -10 mA
-50
mA
-100 mA
-250 mA -500 mA
-0.4
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -1.0 V
-0.4
-0.2
0
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
-0.2
VCE(sat) @ IC/IB = 10
0
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
-0.8
100
-1.2
70
Cibo
TJ = 25°C
50
-1.6
30
20
-2.0
qVB for VBE
-2.4
-2.8
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Cobo
-50 -100
200
VCE = -2.0 V
TJ = 25°C
100
70
50
30
20
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain — Bandwidth Product
-2 k
-1 k
-500
-200
-100
-50
-20
-10
-1.0
DUTY CYCLE ≤ 10%
1.0 ms
TA = 25°C
TC = 25°C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW55
MPSW56
-2.0
-5.0 -10 -20
100 ms
-60 -80 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
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