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LB1976 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
LB1976
ON-Semiconductor
ON Semiconductor ON-Semiconductor
LB1976 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
LB1976
13. Sample calculation for internal power dissipation (approximate)
The calculation assumes the following parameters:
VCC = 5V
VM = 30V
Source-side output transistor ON duty cycle 80% (PWM control)
Output current IO = 1A (RF pin average current)
(1) ICC power dissipation P1
P1 = VCC × ICC = 5V × 14mA = 0.07W
(2) Output drive current power dissipation P2
P2 = VM × 11mA = 30V × 11mA = 0.33W
(3) Source-side output transistor power dissipation P3
P3 = VO(source) × IO × Duty(on) = 0.9V × 1A × 0.8 = 0.72W
(4) Sink-side output transistor power dissipation P4
P4 = VO(sink) × IO = 1.1V × 1A = 1.10W
(5) Total internal power dissipation P
P = P1 + P2 + P3 + P4 = 2.22W
14. IC temperature Rise Measurement
Because the chip temperature of the IC cannot be measured directly, measurement according to one of the following
procedures should always be carried out.
14-1. Thermocouple measurement
A thermocouple element is mounted to the IC heat dissipation fin. This measurement method is easy to implement,
but it will be subject to measurement errors if the temperature is not stable.
14-2. Measurement using internal diode characteristics of IC
This is the recommended measurement method. It makes use of the parasitic diode incorporated in the IC between
FG1 and GND. Set FG1 to High and measure the voltage VF of the parasitic diode to calculate the temperature.
(Our company data: for IF = 1mA, VF temperature characteristics are about 2mV/°C)
15. NC Pins
Because NC pins are electrically open, they may be used for wiring purpose etc.
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PS No.6088-10/10

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