LBE2003S View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

LBE2003S

NPN microwave power transistors

Philips Electronics 

Philips Semiconductors

NPN microwave power transistors

Product specification

LBE2003S; LBE2009S;

LCE2009S

Microwave performance for LBE2009S; LCE2009S up to Tmb = 75 °C in a common emitter class-A test circuit; note 1.

MODE OF OPERATION

f

(GHz)

VCE

(V) (2)

IC

(mA) (2)

PL1

(mW) (3)

Gpo

(dB) (4)

Zi

(Ω)

ZL

(Ω)

Class-A (CW)

2

18

110

≥700 (28.5)

≥9

7.5 + j14.5 17.5 + j38.5

typ. 900 (29.5) typ. 9.8

Notes

1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.

2. IC and VCE regulated.

3. Load power for 1 dB compressed power gain.

4. Low level power gain associated with PL1.

1.2

handbook, full pagewidth

input

VSWR < 3.5

Zo = 50 Ω 2

26.4

0.8

12.4

6.8

13

25

2

output

VSWR < 3

2

5.2

2 Zo = 50 Ω

MGD999

Dimensions in mm.

Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.

Fig.10 Prematching test circuit board for 2 GHz.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03

10

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