LBE2003S View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

LBE2003S

NPN microwave power transistors

Philips Electronics 

Philips Semiconductors

NPN microwave power transistors

Product specification

LBE2003S; LBE2009S;

LCE2009S

1

handbook, halfpage

PL

(W)

0.5

MGD994

(1)

PL1

8

handbook, halfpage

S12

(dB)

4

MGD995

typ

0

0

50

100

150

Pi (mW)

f = 2 GHz; Tmb = 25 °C.

VCE = 18 V; IC = 110 mA.

(1) Gpo = 9.8 dB.

Fig.11 Load power as a function of input power.

0

0

50

100 IC (mA) 150

Class-A operation.

f = 2 GHz; Tmb = 25 °C; VCE = 18 V.

Fig.12 s12 as a function of collector current.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03

11

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