LBE2003S View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
LBE2003S Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN microwave power transistors
Product specification
LBE2003S;
LBE2009S; LCE2009S
FEATURES
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold
metallization
• Optimum temperature profile
• Excellent performance and reliability.
APPLICATIONS
• Common emitter class-A linear power amplifiers up
to 4 GHz.
DESCRIPTION
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.The LCE2009S is a
maintenance type in a SOT442A metal ceramic capstan
package.
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
handbook, halfpage 4
3
1
2
Top view
c
b
e
MAM329
Marking code: LBE2003S = 407; LBE2009S = 409.
Fig.1 Simplified outline and symbol (SOT441A).
handbook, halfpage 4
3
1
2
Top view
c
b
e
MAM330
Marking code: LCE2009S = 408.
Fig.2 Simplified outline and symbol (SOT442A).
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
TYPE NUMBER
MODE OF
OPERATION
f
VCE
IC
PL1
(GHz) (V) (mA) (mW)
LBE2003S Class-A (CW) linear
2
LBE2009S
Class-A (CW) linear
2
LCE2009S
18
30
≥200
18
110 ≥700
Gpo
(dB)
≥10
≥9
Zi
(Ω)
6.2 + j30
ZL
(Ω)
17.5 + j7
7.5 + j15 17.5 + j39
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
2
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