LBE2003S View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
LBE2003S Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN microwave power transistors
Product specification
LBE2003S; LBE2009S;
LCE2009S
APPLICATION INFORMATION
Microwave performance for LBE2003S up to Tmb = 25 °C in a common emitter class-A test circuit; note 1.
MODE OF OPERATION
f
(GHz)
VCE
(V) (2)
IC
(mA) (2)
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(Ω)
ZL
(Ω)
Class-A (CW)
2
18
30
≥200 (23)
≥10
6.2 + j30 17.5 + j7
typ. 250 (24) typ. 11
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
handbook, full pagewidth
2.5
3
2
12.5
1.2
66.5
6
12.5
7
10.5
input 2
1
0.5
C
65
2
3.5
21
3 22
10.5
5
2 output
C
14.5
MCD635
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.7 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
8
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