LBE2003S View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

LBE2003S

NPN microwave power transistors

Philips Electronics 

Philips Semiconductors

NPN microwave power transistors

Product specification

LBE2003S; LBE2009S;

LCE2009S

300

handbook, halfpage

PL

(mW)

200

100

MGD992

(1)

PL1

typ

10

handbook, halfpage

S12

(dB)

5

MGD993

typ

0

0

10

20 Pi (mW) 30

f = 2 GHz; Tmb = 25 °C.

VCE = 18 V; IC = 30 mA.

(1) Gpo = 11 dB.

Fig.8 Load power as a function of input power.

0

0

20

40

60 IC (mA) 80

Class-A operation.

f = 2 GHz; Tmb = 25 °C; VCE = 18 V.

Fig.9 s12 as a function of collector current.

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03

9

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