BDT61 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDT61 Datasheet PDF : 2 Pages
| |||
<^>£mi-(-ondu.ckoi Lptoducti, One.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDT61/A/B/C
DESCRIPTION
• DC Current Gain -hFE= 750(Min)@ lc= 1.5A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A;
100V(Min)- BDT61B; 120V(Min)- BDT61C
• Complement to Type BDT60/A/B/C
APPLICATIONS
• Designed for use in audio ampl fier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
BDT61
60
UNIT
m
W
I \N
t 23
r -£
L-J"
'T IT vw— -/vV 1 '
R1 R2
1-BASe
2.COL _ECTOR
3.BWHTER
TO-22OC package
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
BDT61
60
BDT61A
80
V
BDT61B
100
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1
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BDT61C
120
J rP"
VEBO Emitter-Base Voltage
5
V
•*] G —
-»
f
Ic
Collector Current-Continuous
IB
Base Current
4
A
0.1
A
c l, , I
4
mm
Collector Power Dissipation
Ta=25°C
PC
Collector Power Dissipation
TG=25r
2
W
50
DIM MIN
A 15.70
B 9.90
C 4.20
MAX
15.90
10.10
4.40
T,
Junction Temperature
150
°c
D 0.70 0.90
F 3.40 3.60
Tstg
Storage Ttemperature Range
-65-150 °c
G 4.98 5.18
4 2.70 2.90
a 0.44 0.46
K 13.20 13.40
THERMAL CHARACTERISTICS
L 1.10 1.30
U 2.70 2.90
SYMBOL
PARAMETER
MAX UNIT
R 2.50 2.70
iv,
Rth j-c Thermal Resistance.Junction to Case
2.5 "C/W
S 1.29 1.31
U 6.45 6.65
Rth j-c Thermal Resistance.Junction to Ambient 62.5 r/w
V 8.66 8.86
Ounlih/ S
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