XD010-22S-D2F View Datasheet(PDF) - RF Micro Devices
Part Name
Description
Manufacturer
XD010-22S-D2F Datasheet PDF : 6 Pages
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XD010-22S-
D2F(Y)
1805 Mhz to
1880 MHz
Class A/AB
12 W power
Amplifier Mod-
ule
NOT FOR NEW DESIGNS
XD010-22S-D2F(Y)
1805 MHz to 1880 MHz CLASS A/AB 12 W
POWER AMPLIFIER MODULE
RFMD Green, RoHS Compliant, Pb-Free (Y Part Number)
Package: D
Product Description
Features
RFMD’s XD010-22S-D2F 12W power module is a robust 2-Stage Class Available in RoHS Compliant
A/AB amplifier module for use in the driver stages of GSM/EDGE RF power Packaging
amplifiers for cellular base stations. The power transistors are fabricated 50Ω RF Impedance
using RFMD’s latest, high performance LDMOS process. This unit oper-
ates from a single volage and has internal temperature compensation of
the bias voltage to ensure stable performance over the full temperature
S range. It is a drop-in, no-tune solution for medium power applications
requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It
N Optimum Technology is internally matched to 50 Ω.
Matching® Applied
IG GaAs HBT
GaAs MESFET
S InGaP HBT
Functional Block Diagram
tage 1
tage 2
SiGe BiCMOS
E Si BiCMOS
SiGe HBT
D GaAs pHEMT
Si CMOS
Si BJT
Bias
Network
1
2
Temperature
Compensation
3
4
W GaN HEMT
InP HBT
E RF MEMS
N 9 LDMOS
RF in
VD1
VD2
Case Flange = Ground
RF out
12W output P1dB
Single Supply Operation:
Nominally 28 V
High Gain: 31dB at 1840MHz
High Efficiency: 25% at
1840 MHz
Advanced, XeMOS II LDMOS
FETS
Applications
Base Station PA Driver
Repeater
GSM/EDGE
Parameter
R Frequency of Operation
O Output Power at 1dB Compression
(Single Tone)
F Gain
Peak to Peak Gain Variation
Drain Efficiency
T Input Return Loss
RMS EVM
O Peak EVM
Third Order IMD
N Deviation from Linear Phase (Peak to
Min.
1805
10
28.5
20
10
-26
Specification
Typ.
12
31
0.5
25
14
1.5
5
-32
0.5
Max.
1880
1.0
Unit
MHz
W
dB
dB
%
dB
%
%
dBc
Deg
Condition
5 W Output Power (CW)
10 W CW
5 W Output (CW)
5 W EDGE output
5 W EDGE output
10 W PEP (Two Tone; 1 MHz ΔF)
Peak)
Thermal Resistance Stage 1 (Junc-
11
tion to Case)
°C/W
Thermal Resistance Stage 2 (Junc-
4
tion to Case)
°C/W
Test Conditions: ZIN=ZOUT=50Ω VDD=28.0V IDQ1=230mA IDQ2=115mA TFLANGE=25°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102930 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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