HUF75345S3ST View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
HUF75345S3ST Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
HUF75345S3ST
·DESCRIPTION
·Drain Current: ID= 75A@ TC=25℃
·Drain Source Voltage
: VDSS= 55V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Designed for high current, high speed switching, switch
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
55
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
75
A
PD
Total Dissipation@TC=25℃
325
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.38 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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