HUF75345S3ST View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

HUF75345S3ST

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

·ELECTRICAL CHARACTERISTICS (TC=25℃)

INCHANGE Semiconductor

HUF75345S3ST

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID= 250µA

VGS(th) Gate Threshold Voltage

VDS= VGS; ID=250µA

VSD

Diode Forward On-Voltage

ISD=75A ;VGS= 0

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID=75A

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 50V; VGS= 0

VDS= 40V; VGS= 0

MIN TYPE MAX UNIT

55

V

2.0

4.0

V

1.25

V

10

mΩ

±100 nA

1

µA

250

isc website：www.iscsemi.com

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