FMC6G30US60 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FMC6G30US60 Datasheet PDF : 9 Pages
| |||
10000
Common Emitter
VGE = ± 15V, RG = 7Ω
T = 25℃ ━━
C
T = 125℃ ------
C
1000
Eoff
Eon
Eoff
100
15
30
45
60
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
10Ω
T = 25℃
12
C
VCC = 100 V
9
300 V
200 V
6
3
0
0
20
40
60
80
100
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
200
100
IC MAX. (Pulsed)
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100℃
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
100
10
1
Single Nonrepetitive
Pulse TJ ≤ 125℃
VGE = 15V
RG = 7 Ω
0.1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, VCE [V]
Fig 17. RBSOA Characteristics
©2000 Fairchild Semiconductor International
5
1
0.1
0.01
IGBT :
0.005
DIODE :
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMC6G30US60 Rev. A
Share Link: 