BCX20 View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name

Description

Manufacturer

BCX20

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 1 V, IC = 100 mA

hFE

VCE = 1 V, IC = 300 mA

hFE

VCE = 1 V, IC = 500 mA

hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 1 V, IC = 500 mA

Gain-Bandwidth Product – Transitfrequenz

VBEon

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCX 19 , BCX 20

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

100

–

600

70

–

–

40

–

–

–

–

1.2 V

100 MHz

–

–

–

5 pF

–

RthA

420 K/W 2)

BCX 17, BCX 18

Marking – Stempelung

BCX 19 = U1

BCX 20 = U2

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

55

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