RF2128P View Datasheet(PDF) - RF Micro Devices
Part Name
Description
Manufacturer
RF2128P Datasheet PDF : 4 Pages
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RF2128P
Pin Function Description
Interface Schematic
1
VCC2
Power supply for the driver stage and interstage matching. External
matching on this pin is required to optimize the gain. The matching on
this port also greatly affects the input impedance. A decoupling capaci-
tor of 330pF is required, together with a series RC for tuning for maxi-
mum gain at the desired frequency. See the application information for
details.
2
GND1
Ground connection for the driver stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
2
3
PD
Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typical 1.2V or less at room temperature. When this pin is
"high", all circuits are operating normally. A "high" is VCC. If PD is below
VCC output power and performance will be degraded. This could be
used to obtain some gain control, but results are not guaranteed.
4
RF IN
RF Input. This is a 50Ω input, but the actual impedance depends on the
matching provided on pin 1. An external DC blocking capacitor is
required if this port is connected to a DC path to ground.
5
GND2
Ground connection for the output stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
6
RF OUT RF Output and power supply for the output stage. Bias for the output
stage needs to be provided on this pin. This can be done through a
quarter-wave microstrip that is RF grounded on the other end. For
matching to 50Ω, an external series microstrip line is required.
7
RF OUT Same as pin 6.
8
VCC1
Power supply for the bias circuits. An external RF bypass capacitor of
22pF is required. Keep the traces to the capacitor as short as possible,
and connect the capacitor immediately to the ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
VPD
RF IN
VCC
22 pF
330 pF
50 Ω µstrip
L=100 mil
L=100 mil,
W=20 mil
1
2
33 pF
3
BIAS
CIRCUITS
8 pF
4
100 Ω, 200 mil
PACKAGE BASE
GND
(PCB mat'l: FR-4,
Thickness: 0.031")
22 pF
8
L=220 mil,
7
W=10 mil
6
67 Ω, 0.20"
2 pF
5
RF OUT
Rev A4 990216
2-91
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