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Part Name
Description
BC212LA View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
BC212LA
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Continental Device India Limited
BC212LA Datasheet PDF : 4 Pages
1
2
3
4
BC212L, BC212LA, BC212LB
BC214L, BC214LB, BC214LC
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Characteristic
Collector Emitter Voltage
I
C
=2mA, I
B
=0
BC212L
BC214L
Symbol Min Typ Max
BV
CEO
50
-
-
30 -
-
Collector Base Voltage
I
C
=10uA, I
E
=0
Emitter Base Voltage
I
E
=10uA, I
C
=0
Collector Cutoff Current
V
CB
=30V, I
E
=0
Emitter Cutoff Current
V
EB
=4V, I
C
=0
DC Current Gain
I
C
=10uA, V
CE
=5V
I
C
=2mA, V
CE
=5V
BC212L
BC214L
BC212L
BC214L
BC212L
BC214L
BV
CBO
60
-
-
45 -
-
BV
EBO
5
-
-
I
CBO
-
- 15
I
EBO
-
- 15
h
F E
40 -
-
100 -
-
60 -
-
140 - 600
Unit
V
V
V
V
V
nA
nA
-
-
-
-
I
C
=100mA, V
CE
=5V*
Collector Emitter Sat. Voltage
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA*
Base Emitter Sat. Voltage
I
C
=100mA, I
B
=5mA
Base Emitter On Voltage
I
C
=2mA, V
CE
=5V
DYNAMIC CHARACTERISTICS
Transition Frequency
I
C
=10mA, V
CE
=5V, f=50MHz
Output Capacitance
V
CB
=10V, I
E
=0,f=1MHz
Noise Figure
I
C
=200uA, V
CE
=5V, R
s
=2k
Ω
f=1KHz, f=200Hz
I
C
=0.2mA, V
CE
=5V, R
s
=2k
Ω
f=30 Hz t o 15 KHz
BC212L
BC214L
BC212L
BC214L
- 120 -
-
V
CE(sat)
- 0.10 -
V
- 0.25 0.6
V
V
BE(sat)
- 1.00 1.4
V
V
BE(on)
0.60 0.62 0.72
V
f
T
- 280 -
MHz
- 320 -
MHz
C
ob
-
- 6.0
pF
N
F
-
- 10
dB
-
-
2
dB
Continental Device India Limited
Data Sheet
Page 2 of 4
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