BD233 View Datasheet(PDF) - Micro Commercial Components

Part Name

Description

Manufacturer

BD233

NPN Plastic-Encapsulate Transistors

Micro Commercial Components 

MCC

TM

Micro Commercial Components

 omponents

20736 Marilla Street Chatsworth



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Features

• Halogen free available upon request by adding suffix "-HF"

• Power Dissipation: PCM =1.25W, Ta=25ć

• Collector Current : IC=2A

• Complement to BD234/236/238 respectively

• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

• Epoxy meets UL 94 V-0 flammability rating

• Moisure Sensitivity Level 1

• Marking: Type Number

Maximum Ratings*

Symbol

VCEO

VCBO

VCER

VEBO

IC

ICP

PC

TJ

TSTG

Rating

Collector-Emitter Voltage

BD233

BD235

BD237

Collector-Base Voltage

BD233

BD235

BD237

Collector-Emitter Voltage

BD233

BD235

BD237

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation ( TC=25ć)

Operating Junction Temperature

Storage Temperature

Rating

45

60

80

45

60

100

45

60

100

5

2

6

25

150

-65 to +150

Unit

V

V

V

V

A

A

W

ć

ć

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max Units

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

VCEO(sus)

BD233 (IC=0.1Adc, IB=0)

BD235 (IC=0.1Adc, IB=0)

BD237 (IC=0.1Adc, IB=0)

Collector Cutoff Current

ICBO

BD233 (VCB=45Vdc, IE=0)

BD235 (VCB=60Vdc, IE=0)

BD237 (VCB=100Vdc, IE=0)

IEBO

Emitter Cutoff Current

(VBE=5.0Vdc, IC=0)

DC Current Gain

hFE

(VCE=2V, IC=150mA)

(VCE=2V, IC=1A)

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=1A, IB=0.1A)

VBE(on)

Base-Emitter ON Voltage

(VCE=2V, IC=1A)

fT

Current Gain Bandwidth Product

(VCE=10V, IC=0.25A)

*Pulse Test: PW=300µs, Duty Cycle=1.5% Pulsed

45

---

V

60

---

V

80

---

V

---

100

µA

---

100

µA

---

100

µA

---

1.0

mA

40

---

25

---

---

0.6

V

---

1.3

V

3

---

MHz

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

BD233

BD235

BD237

NPN

Plastic-Encapsulate

Transistors



A

K

N

D

E

M

B

1 23

L

G

C

F

Q





















L

M

N

Q

J

PIN 1.

EMITTER

PIN 2.

COLLECTOR

PIN 3.

BASE

DIMENSIONS

 





0.291

0.307

0.417

0.433

0.602

0.618

4

1

0.118

0.126

0.026

0.034

0.046

0.054

0.090TYP

0.098

0.114

0.083

0.091

0.000

0.043

0.012

0.059

0.018

0.024







7.40

7.80

10.60

11.00

15.30

15.70

3.90

4.10

3.00

3.20

0.66

0.86

1.17

1.37

2.290TYP

2.50

2.90

2.10

2.30

0.00

0.30

1.10

1.50

0.45

0.60



Revision: B

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2013/01/01

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