Philips Semiconductors
BGE788
750 MHz, 34 dB gain push-pull amplifier
5. Characteristics
Table 5: Characteristics
Bandwidth 40 MHz to 740 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω; unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
power gain
f = 50 MHz
f = 750 MHz
33.5 -
34 -
34.5 dB
- dB
SL
slope cable
f = 40 MHz to 750 MHz
equivalent
0.5 -
2.5 dB
FL
flatness of
f = 40 MHz to 750 MHz
frequency
response
-
-
±0.5 dB
s11
input return
f = 40 MHz to 80 MHz
losses
f = 80 MHz to 160 MHz
20 -
18.5 -
- dB
- dB
f = 160 MHz to 320 MHz
17 -
- dB
f = 320 MHz to 640 MHz
15.5 -
- dB
f = 640 MHz to 750 MHz
14 -
- dB
s22
output return
f = 40 MHz to 80 MHz
losses
f = 80 MHz to 160 MHz
20 -
18.5 -
- dB
- dB
f = 160 MHz to 320 MHz
17 -
- dB
f = 320 MHz to 640 MHz
15.5 -
- dB
f = 640 MHz to 750 MHz
14 -
- dB
ϕs21
CTB
phase response
composite triple
beat
f = 50 MHz
110 channels flat;
Vo = 44 dBmV; measured at
745.25 MHz
135 -
-
-
225 deg
−49 dB
Xmod
cross modulation 110 channels flat;
Vo = 44 dBmV; measured at
55.25 MHz
-
-
−51 dB
CSO
composite
second order
distortion
110 channels flat;
Vo = 44 dBmV; measured at
746.5 MHz
-
-
−52 dB
d2
second order
distortion
[1] -
-
−64 dB
Vo
output voltage dim = −60 dB
F
noise figure
f = 750 MHz
[2] 58
-
-
-
- dBmV
7 dB
PM
positive match f = 40 MHz to 2 GHz
-
-
3 dB
Itot
total current
consumption
(DC)
[3] 290 -
320 mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
[2] Measured according to DIN45004B; fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo − 6 dB;
fr = 749.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 738.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14433
Product data sheet
Rev. 04 — 30 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
3 of 7