BLF175 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BLF175

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLX94C

FEATURES

• Withstands full load mismatch

• Emitter ballasting resistors for an optimum temperature

profile

• Gold metallization ensures excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor primarily intended

for class-A, B or C operation. The transistor is

encapsulated in a 4-lead SOT122A stud envelope with a

ceramic cap.

APPLICATIONS

• Transmitting applications in the UHF range with a

nominal supply voltage up to 28 V.

PINNING - SOT122A

PIN

SYMBOL

DESCRIPTION

1

c

collector

2

e

emitter

3

b

base

4

e

emitter

handbook, halfpage 4

1

c

3

b

e

2

MAM229

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common emitter test circuit.

MODE OF

f

VCE

PL

Gp

ηC

OPERATION

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

470

28

25

>6.5

>55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1996 Feb 06

2

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