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JANS2N7373 View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
JANS2N7373 Datasheet PDF : 3 Pages
1 2 3
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Power Supply
Inverters and Converters
General Purpose Amplifiers
FEATURES:
Planar Process for Reliability
Fast Switching
High-Frequency Power Transistors
For Complementary Use with Each Other
15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
Leads can be Formed
All Terminals Isolated from the Case
2N7372 - PNP
2N7373 - NPN
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200°C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.
TO-254AA
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Continuous Collector Current
IC
Peak Collector Current
IB
Continuous Base Current
T STG
TJ
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
PT
Continuous Device
Dissipation TC = 25° C
TC = 100° C
θ JC
Thermal Resistance Junction to Case
2N7372
2N7373
- 100
100
- 80
80
- 5.5
5.5
5
5
10
10
2
2
-65 to 200
-65 to 200
300
15
58
58
33
33
3
3
UNITS
V
V
V
A
A
A
°C
°C
°C
mj
W
W
° C/W
MSC1343.PDF 010-29-99

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