DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SBYV28-50 View Datasheet(PDF) - SUNMATE electronic Co., LTD

Part Name
Description
Manufacturer
SBYV28-50 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
5.0
TL Lead Temperature
4.0
3.0
2.0
TA, Ambient Temperature
1.0
P.C.B. Mounted
0.5 x 0.5" (12 x 12 mm)
Copper Pads
0
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 1. Forward Current Derating Curves
100
TJ = 100 °C
10
TJ = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
90
10 ms Single Half Sine-Wave
80
TJ = 175 °C
70
60
50
40
30
20
1
10
100
Number of Cycles at 50 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
60
IF = 4.0 A
VR = 30 V
50
40
30
20
dI/dt = 150 A/µs
dI/dt = 100 A/µs
dI/dt = 20 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
10
0
0
trr
Qrr
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
2of2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]