BSR57 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BSR57

N-channel FETs

NXP Semiconductors. 

NXP Semiconductors

BSR56; BSR57; BSR58

N-channel FETs

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VDS

drain-source voltage

-

VGS

gate-source voltage

-

VDG

drain-gate voltage

-

IG

gate current

-

Ptot

total power dissipation

Tamb = 40 C

[1] -

Tstg

storage temperature

65

Tj

junction temperature

-

[1] Mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.

Max Unit

40

V

40

V

40

V

50

mA

250

mW

+150 C

150

C

300

Ptot

(mW)

200

aaa-013766

100

0

0

40

Fig 1. Power derating curve

80

120

160

200

Tamb (°C)

6. Thermal characteristics

Table 6.

Symbol

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from junction to

ambient

Conditions

[1] Mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.

Typ

[1] 430

Unit

K/W

BSR56_57_58

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 25 June 2014

© NXP Semiconductors N.V. 2014. All rights reserved.

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