BSS51 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BSS51 Datasheet PDF : 4 Pages
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NPN Darlington transistors
BSS50;BSS51;BSS52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSS50
BSS51
BSS52
VCES
collector-emitter voltage
BSS50
BSS51
BSS52
VEBO
Ic
ICM
IB
Plot
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
Tstg
Tj
Tannb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb<25°C
Tcase < 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
-
60
V
-
80
V
-
90
V
-
45
V
-
60
V
-
80
V
-
5
V
-
1
A
-
2
A
-
100
mA
-
0.8
W
-
5
W
-65
+150
°C
-
200
°C
-65
+150
°C
VALUE
220
35
UNIT
K/W
K/W
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