Philips Semiconductors
NPN switching transistors
Product specification
BSX59; BSX61
FEATURES
• High current (max. 1 A)
• Low voltage (max. 45 V).
APPLICATIONS
• High-speed switching in industrial applications.
DESCRIPTION
NPN switching transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
toff
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
BSX59
BSX61
CONDITIONS
MIN.
open emitter
−
open base
−
−
Tamb ≤ 25 °C
−
IC = 500 mA; VCE = 1 V
30
IC = 50 mA; VCE = 10 V; f = 100 MHz
250
ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA
−
−
MAX.
70
45
1
800
−
−
UNIT
V
V
A
mW
MHz
60
ns
100
ns
1997 May 22
2