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BSP300L6327(2008) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BSP300L6327
(Rev.:2008)
Infineon
Infineon Technologies Infineon
BSP300L6327 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BSP300
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.0... 4.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP300
Type
BSP300
VDS
800 V
ID
0.19 A
RoHS compliant
Yes
RDS(on)
20 Ω
Package
PG-SOT223
Marking
BSP300
Tape and Reel Information Packaging
L6327
Dry
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 0.8 A, VDD = 50 V, RGS = 25 Ω
L = 105 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
Unit
A
0.19
0.76
mJ
36
± 20
V
W
1.8
Rev 2.0
Page 1
2008-03-26

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