BSP300(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP300
(Rev.:2008)

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP300

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air 1)

Thermal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

RthJS

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 70

K/W

≤ 14

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 800 V, VGS = 0 V, Tj = 25 °C

VDS = 800 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 10 V, ID = 0.19 A

V(BR)DSS

800

-

VGS(th)

2

3

IDSS

-

0.1

-

10

IGSS

-

10

RDS(on)

-

15

V

-

4

µA

1

100

nA

100

Ω

20

Rev 2.0

Page 2

2008-03-26

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