BSP300(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP300
(Rev.:2008)

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP300

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs , Tj = 25 °C

l

0.45

Ptot = 2W

A

kjihfg e

d

I

D

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0

4

8

12

16

VGS [V]

a 4.0

b 4.5

c 5.0

c d 5.5

e 6.0

f 6.5

g 7.0

h 7.5

i 8.0

j 9.0

b k 10.0

l 20.0

a

V

24

VDS

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

65

Ω

a

b

55

R

DS (on)

50

45

40

35

30

c

25

20

d

15

k eij gh f

10

VGS [V] =

5

abcdef

4.05 5.0 5.5 6.0 6.5 7.0

0

ghi j k

7.5 8.0 9.0 10.0 20.0

0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34

ID

Typ. transfer characteristics ID = f(VGS)

parameter: tp = 80 µs

VDS≥ 2 x ID x RDS(on)max

1.0

A

ID

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0 1 2 3 4 5 6 7 8 V 10

V

GS

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

0.50

S

gfs 0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8

I

D

Rev 21..001

Page 16

22000085--0130--2267

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