BSP300L6327(2008) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP300L6327
(Rev.:2008)

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP300

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 0.8 A, VDD = 50 V

RGS = 25 Ω, L = 105 mH

38

mJ

32

E

AS

28

24

20

16

12

8

4

0

20 40 60 80 100 120 °C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

960

V

920

V

(BR)DSS

900

880

860

840

820

800

780

760

740

720

-60

-20

20

60

100 °C 160

Tj

Rev 2.0

Page 8

2008-03-26

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