BSP300H6327 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BSP300H6327

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP300

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

Unit

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TA = 25 °C

-

Inverse diode direct current,pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 0.38 A, Tj = 25 °C

-

Reverse recovery time

trr

VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs

-

A

-

0.19

-

0.76

V

1

1.4

ns

95

-

µC

0.25

-

Rev 2.2

Page 4

2012-11-29

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