Q67000-S245(2002) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
Q67000-S245 Datasheet PDF : 8 Pages
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Rev. 1.0
SIPMOS Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSS123
Product Summary
VDS
RDS(on)
ID
100 V
6Ω
0.17 A
Gate
pin1
Drain
pin 3
SOT23
3
Source
pin 2
2
1 VPS05161
Type
BSS123
BSS123
Package
SOT23
SOT23
Ordering Code
Q62702-S512
Q67000-S245
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
ID puls
TA=25°C
Reverse diode dv/dt
dv/dt
IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
Ptot
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
0.17
0.14
0.68
6
±20
Class 1
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10
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