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Part Name
Description
Q67000-S245(2002) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
Q67000-S245
(Rev.:2002)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
Q67000-S245 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Rev. 1.0
BSS123
1 Power dissipation
P
tot
=
f
(
T
A
)
BSS123
0.38
W
0.32
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0 20 40 60 80 100 120
°C
160
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
BSS123
A
10
0
10
-1
/
I
D
=
V
DS
R
DS(on)
t
p
= 120.0µs
1 ms
10 ms
10
-2
DC
2 Drain current
I
D
=
f
(
T
A
)
parameter:
V
GS
≥
10 V
BSS123
0.18
A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 20 40 60 80 100 120
°C
160
T
A
4 Transient thermal impedance
Z
thJA
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
3
BSS123
K/W
10
2
10
1
10
0
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
0
10
1
10
2
V
10
3
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
t
p
Page 4
2002-12-10
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