BU1706AX View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BU1706AX Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.7. Switching times waveforms with inductive load.
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f (Ths)
Zth / (K/W)
10
BU1706AX
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
D=0
PD
tp
tp
D= T
T
t
0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.9. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VBESAT / V
1.2
BU1706A
1.1
Tj = 25 C
1
Tj = 125 C
0.9
0.8
IC/IB =
0.7
4
0.6
5
0.5
6
0.4
0.1
1
10
IC / A
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
VCESAT / V
1
0.9
IC/IB =
6
0.8
5
0.7
4
0.6
BU1706A
0.5
0.4
Tj = 25 C
0.3
Tj = 125 C
0.2
0.1
0
0.1
1
10
IC / A
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU1706A
1
0.9
0.8
0.7
0.6
0
Fig.12.
IC =
3A
2A
1.5 A
0.5 A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
April 1994
4
Rev 1.000
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