BU1706AX View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BU1706AX Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
IC / A
10 ICM
I CDC
1
Ptot
tp =
0.1
100 us
1 ms
10 ms
DC
0.01
1
10 VCE / V 100
1000
Fig.13. Forward bias safe operating area. Ths = 25 ˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
VCESAT / V
10
BU1706A
h FE
100
5V
10
1V
Tj = 25 C
1
Tj = 125 C
BU1706A
0.1
0.01
0.1
1
10
IC / A
Fig.15. Typical DC current gain.
hFE = f(IC); parameter VCE
IC / A
6
BU1706A
5
4
3
2
1
0
0
400
800
1200
VCE / V
1600
2000
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
1
3A
2A
1.5 A
0.1 IC = 0.5A
Tj = 25 C
Tj = 125 C
0.01
0.01
0.1
1
10
IB / A
Fig.14. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
April 1994
5
Rev 1.000
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