BU426 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BU426 Datasheet PDF : 2 Pages
| |||
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BU426
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)=375V(Min)
• High Switching Speed
APPLICATIONS
• Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
800
V
VCES Collector-Emitter Voltage VBE= 0
800
V
!11I
• 2> ,|
j
Kt
PIN 1. BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
^— 3—», — C -«-
f-*-
•*"*
VCEO
VEBO
Ic
I CM
IB
IBM
PC
Tj
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ Tc=25°C
Junction Temperature
Storage Temperature Range
375
V
10
V
6
A
10
A
2
A
3
A
70
W
150
•c
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth J-c Thermal Resistance, Junction to Case
MAX UNIT
1.1 r/w
'• H"~~~~
It"'
K
G
„"'
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
u 5.90 6,' 0
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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