CPH6443 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
CPH6443 Datasheet PDF : 5 Pages
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CPH6443
Power MOSFET
35V, 37mΩ, 6A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• Low On-Resistance
• 4V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• DC/DC Converter
• Current Balance Switch for Backlight
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
35
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
6
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
24
A
Power Dissipation
When mounted on ceramic substrate
PD
(1200mm2 × 0.8mm)
Junction Temperature
Tj
1.6
W
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1200mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
78.1 °C/W
www.onsemi.com
VDSS
35V
RDS(on) Max
37mΩ@ 10V
61mΩ@ 4.5V
73mΩ@ 4V
ID Max
6A
ELECTRICAL CONNECTION
N-Channel
1, 2, 5, 6
1 : Drain
2 : Drain
3
3 : Gate
4 : Source
5 : Drain
6 : Drain
4
PACKING TYPE : TL
MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
September 2015 - Rev. 2
Publication Order Number :
CPH6443/D
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