IS42S16100 View Datasheet(PDF) - Integrated Circuit Solution Inc

Part Name

Description

Manufacturer

IS42S16100

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Solution Inc 

IS42S16100

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter

Test Condition

Speed Min. Max. Unit

IIL

Input Leakage Current

0V < VIN < VCC, with pins other than

the tested pin at 0V

–5 5 µA

IOL

Output Leakage Current

Output is disabled

0V < VOUT < VCC

–10 10 µA

VOH Output High Voltage Level IOUT = –2 mA

2.4 — V

VOL Output Low Voltage Level IOUT = +2 mA

ICC1

Operating Current(1,2)

One Bank Operation, CAS latency = 3

— 0.4 V

-6 — 145 mA

Burst Length=1

tRC > tRC (min.)

IOUT = 0mA

-7 — 140 mA

-8 — 135 mA

ICC2 Precharge Standby Current CKE < VIL (MAX)

(In Power-Down Mode)

tCK = tCK (MIN)

——

2 mA

ICC3 Active Standby Current

CKE > VIH (MIN)

(In Non Power-Down Mode)

tCK = tCK (MIN)

— —6 45 mA

— —7 40 mA

— —8 35 mA

ICC4 Operating Current

(In Burst Mode)(1)

tCK = tCK (MIN)

IOUT = 0mA

-6 — 140 mA

-7 — 130 mA

-8 — 100 mA

ICC5 Auto-Refresh Current

tRC = tRC (MIN)

-6 — 90 mA

-7 — 80 mA

-8 — 70 mA

ICC6 Self-Refresh Current

CKE < 0.2V

——

1 mA

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time

increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each

memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load.

Integrated Circuit Solution Inc.

5

DR006-0B

Share Link: