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DCR1277SD View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
Manufacturer
DCR1277SD
Dynex
Dynex Semiconductor Dynex
DCR1277SD Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
DCR1277SD
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
I
T(AV)
IT(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
Continuous (direct) on-state current
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
I
Surge (non-repetitive) on-state current
TSM
I2t
I2t for fusing
Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Conditions
10ms half sine; T = 125oC
case
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
V =0
R
Max. Units
995
A
1565
A
1420
A
690
A
1085
A
920
A
Max. Units
19.0
kA
1.8 x 106 A2s
23.75
kA
2.82 x 106 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
T
Storage temperature range
stg
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 22.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.020 oC/W
- 0.036 oC/W
- 0.044 oC/W
- 0.004 oC/W
-
0.008 oC/W
-
135
oC
-
125
oC
-55 125
oC
20.0 24.0 kN
2/9

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