DCR1277SD View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR1277SD

Phase Control Thyristor

Dynex Semiconductor 

DCR1277SD

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

IRRM/IDRM

dV/dt

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

150 mA

-

300 V/µs

dI/dt Rate of rise of on-state current

V

T(TO)

rT

t

gd

Threshold voltage

On-state slope resistance

Delay time

tq

Turn-off time

From 67% V to 1000A Repetitive 50Hz -

DRM

Gate source 10V, 5Ω

t

r

≤

0.5µs,

T

j

=

125oC

Non-repetitive -

At T = 125oC

-

vj

At Tvj = 125oC

-

V

D

=

67%

V,

DRM

Gate

source

30V,

15Ω

t

r

=

0.5µs,

T

j

=

25oC

-

I

T

=

2000A,

tp

=

1ms,

Tj

=

125˚C,

VR = 50V, dIRR/dt = 5A/µs,

500

VDR = 67% VDRM, dVDR/dt = 20V/µs linear

100 A/µs

150 A/µs

0.95 V

0.45 mΩ

2.5

µs

650 µs

IL

Latching current

IH

Holding current

Tj = 25oC, VD = 5V

Tj = 25oC, Rg-k = ∞

700 1000 mA

200 500 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

V

GD

VFGM

VFGN

V

RGM

IFGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At V T = 125oC

DRM case

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, fig.4

Max. Units

4.0

V

400 mA

0.25 V

30

V

0.25 V

5

V

10

A

150 W

5

W

3/9

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