7C1325-100 View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
7C1325-100 Datasheet PDF : 13 Pages
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ADVANCED INFORMATION
CY7C1325
Write Cycle Descriptions[1,2,3,4]
Function
Read
Read
Write Byte 0-DQ[7:0] and DP0
Write Byte 1-DQ[15:8] and DP1
Write All Bytes
Write All Bytes
GW
BWE
BWS1
BWS0
1
1
X
X
1
0
1
1
1
0
1
0
1
0
0
1
1
0
0
0
0
X
X
X
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
IDDZZ (L Version)
tZZS
tZZREC
Description
Snooze mode
standby current
Snooze mode
standby current
Device operation to
ZZ
ZZ recovery time
Test Conditions
ZZ > VDD − 0.2V
ZZ > VDD − 0.2V
ZZ > VDD − 0.2V
ZZ < 0.2V
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ...............................................–55°C to +125°C
Supply Voltage on VDD Relative to GND................ –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[5]...............................................–0.5V to VDD + 0.5V
Min
Max
Unit
10
mA
2
mA
2tCYC
ns
2tCYC
ns
DC Input Voltage[5]........................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Com’l
Ambient
Temperature[6]
0°C to +70°C
VDD
VDDQ
3.135V to 3.6V 2.375V to VDD
Notes:
4. When a write cycle is detected, all I/Os are three-stated, even during byte writes.
5. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
6. TA is the “instant on” case temperature.
7
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