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Part Name
Description
DF65435 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DF65435
Fast Recovery Diode
Dynex Semiconductor
DF65435 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
1000
100
10
1
0.100
A
B
C
D
E
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
E: I
F
= 100A
10
100
Rate of rise of reverse current dI
R
/dt - (A/
µ
s)
Fig.4 Typical reverse recovery current
1000
d.c. Double side cooled
DF654
0.010
0.001
0.01
0.1
1
10
100
Time - (s)
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
5/7
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