BCW66H View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Part Name
Description
Manufacturer
BCW66H Datasheet PDF : 4 Pages
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW66 TRANSISTOR (NPN)
SOT-23
FEATURES
Complementary to BCW68
BCW66 is subdivided into three groups F,G and H according to DC current gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
75
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
800
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
fT
Cob
Cib
NF
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=45 V, IE=0
VEB=4 V, IC=0
VCE=10V, IC=0. 1mA
BCW66F
BCW66G
BCW66H
VCE=1V, IC= 10mA
VCE=1V, IC=100mA
VCE=2V, IC=500mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V,IC=20mA,f=100MHz
VCB=10V,IE=0,f=1MHz
VEB=0.5V,IE=0,f=1MHz
VCE=5V,IC=0.2mA,f=1KHz,
Rs=1KΩ,BW=200Hz
Min
75
45
5
35
50
80
75
110
180
100
160
250
35
60
100
100
MARKING
Rank
Range
Marking
F
100-250
EF
G
160-400
EG
H
250-630
EH
www.cj-elec.com
1
Typ
Max Unit
V
V
V
0.02
μA
0.02
μA
250
400
630
0.3
V
0.7
V
2
V
MHz
12
pF
80
pF
10
dB
DA,JOucnt,2014
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