FMBL1G200US60 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FMBL1G200US60

Molding Type Module

Fairchild Semiconductor 

30000

10000

Eoff

Eon

1000

Common Emitter

VCC = 300V, VGE = ± 15V

RG = 1.8Ω

TC = 25℃

T = 125℃

100

C

30 40 60 80 100 120 140 160 180 200

Collector Current, I [A]

C

Fig 13. Switching Loss vs. Collector Current

15

Common Emitter

R

L

=

1.5

Ω

12 TC = 25℃

9

V = 100 V

6

CC

300 V

200 V

3

0

0 100 200 300 400 500 600 700 800 900

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

1000

IC MAX. (Pulsed)

IC MAX. (Continuous)

100

50us

100us

1㎳

DC Operation

10

Single Nonrepetitive

Pulse T = 25℃

C

Curves must be derated

linerarly with increase

in temperature

1

0.3

1

10

100

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics

1000

1000

100

10

Safe Operating Area

V = 20V, T = 100oC

GE

C

1

1

10

100

1000

Collector-Emitter Voltage, VCE [V]

Fig 16. Turn-Off SOA Characteristics

1000

100

10

Single Nonrepetitive

Pulse T ≤ 125℃

J

V = 15V

GE

R

G

=

1.8

Ω

1

0

100 200 300 400 500 600 700

Collector-Emitter Voltage, V [V]

CE

Fig 17. RBSOA Characteristics

©2001 Fairchild Semiconductor Corporation

1

0.1

0.01

1E-3

T =25℃

C

IGBT :

DIODE :

10-5

10-4

10-3

10-2

10-1

100

101

Rectangular Pulse Duration [sec]

Fig 18. Transient Thermal Impedance

FMBL1G200US60 Rev. A

Share Link: