FQD6P25 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD6P25 Datasheet PDF : 9 Pages
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Typical Characteristics
101 Top :
-1V5GSV
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
100
Notes :
1. 250s Pulse Test
10-1
2. TC = 25
10-1
100
101
-VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
VGS = - 10V
VGS = - 20V
Note : TJ = 25
4
8
12
16
20
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1400
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
800
600
400
200
0
10-1
Ciss
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2008 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
Notes :
1. VDS = -40V
2. 250s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150 25
Notes :
1.
2.
2V5G0S=s0VPulse
Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = -50V
10
VDS = -125V
VDS = -200V
8
6
4
2
Note : ID = -6.0 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, October 2008
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